Publications on the project |
040 Effect of high-temperature annealing on the optical and photoluminescence properties of nanocrystalline SiC films |
Authors: | Lopin A. V.,Semenov AV., Puzikov V.M.,Vovk O. N.,Dmitruk I. N., Romano V. | |
Summary: | The optical and photoluminescence (PL) properties of nanocrystalline 3C-SiC films and the effect of the boundary regions between the nanocrystals were studied for two sets of films: (a) films with 10–15 nm nanocrystal size obtained by direct ion deposition method and (b) similar films annealed in oxygen at 850–950 °C. It was shown that annealing of the nanocrystalline SiC films resulted in weaker absorption in a broad spectral range, and to the increase of the optical band gap from 1.8 to 2.2 eV. On the contrary, the edge PL bands in the UV range (2.2 to 2.4 eV) remained similar. In the IR range, three maxima absent in the as-grown films, appeared at 1.52 eV, 1.56 eV and 1.63 eV. Measurement of the intensity of PL maxima as a function of the excitation power showed a nonlinear dependence that was attributed to the onset of stimulated emission. | |
Keywords: | Photoluminescence (PL) properties, of nanocrystalline 3C-SiC films, by direct ion deposition method. | |
Edition: | Thin Solid Films V. 520, Issue 21 | | | 2012,
P. 6626 -6630,English |
040 Preparation and properties of nanocrystalline silicon carbide films |
Authors: | Puzikov V.M.,Semenov O.B. Lopin O. V. | |
Summary: | This review presents the latest results of studies of the processes of formation of nanocrystalline SiC films under direct deposition of carbon and silicon ions with high energy, as well as the structure, properties, and apply their nc-SiC films | |
Keywords: | nc-SiC films,carbon and silicon ions | |
Edition: | In the book "Crystalline materials for optics and electronics" Edited by V.M. Puzikov. Kharkov: Institute of Single Crystals | | | 2012,
330 - 397,Russian |
040 Light scattering in nanocrystalline silicon - carbide (nc-SiC) films |
Authors: | A. V. Semenov, A. V. Lopin, V. M. Puzikov, and P. V. Mateichenko
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Summary: | Correlations between the optical and structural characteristics of nanocrystalline silicon_carbide (nc-SiC) films prepared by direct ion deposition onto sapphire substrates are studied. The effect of the scattering of electromagnetic radiation in nc-SiC films on their optical characteristics (transmittance, reflectance, and absorbance) is investigated. It is shown that in nc-SiC films deposited at temperatures <700°C scattering is minimum due to their morphological and structural homogeneity. The films deposited at >1000°C exhibit significant morphological and structural heterogeneity and therefore strongly scatter light. It is established that the account for light scattering leads to a blue shift of the fundamental absorption edge in the optical density spectra. The spectra of the scattering coefficients for the nc-SiC films are studied and calculated. The effect of high temperature annealing on the film structure and scattering spectra is investigated. It is demonstrated that the structural variations induced by annealing are accompanied by a change of the initial mechanism of Rayleigh scattering in the nc-SiC films for the Mie scattering. | |
Keywords: | the Mie scattering, Rayleigh scattering, morphological and structural heterogeneity,transmittance, reflectance, and absorbance, high temperature annealing. | |
Edition: | Journal of Surface Investigation. X_ray, Synchrotron and Neutron Techniques, Vol.8,№1 | | | 2014,
58 -64. ,Russian |
040 Protective coatings high frequency p-i-n diodes and thermal resistive temperature sensors based on films of nanocrystalline SiC. |
Authors: | V.M Puzikov, O.V. Lopin, O.V. Semenov, A.A.Kozlovsky, M.S.Boltovets, V. A. Krivutsa, V. F. Mitin, V.V. Holevchuk | |
Summary: | Developed protective coating nc- SiC high frequency p-i-n diodes ensure the stable operation of the device at high temperatures and harsh climatic conditions. It is possible to increase the resource diodes. Based nc- SiC films were developed microsensors temperature for reliable measurement temperature range of 2- 800 K under various external influences | |
Keywords: | high frequency p-i-n diodes, nc- SiC films, microsensors temperature | |
Edition: | Nanoscale systems and nanomaterials: research in Ukraine. Editor A.G.Naumovec,NAS of Ukraine. | | | 2014,
186 -191,Russian |
The events in the framework of the project |
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040 Executant:Institute for Single Crystals, Department of Physical and Technical Problems of Materials Science, Section Physical, Engineering and Mathematics 2. Technology Semiconductor Nanostructures Purpose:Development of scientific and technical solutions and basic nanotechnology manufacturing high-temperature sensors based on nanostructured layers of silicon carbide and their manufacturing Expected results:Release of new product: technology Stage 1:Analysis of scientific literature and development of scientific and technical solutions needed to create technology of radiation and temperature sensors based on nanostructured layers of high-resistance silicon carbide Stage 2:Design and simulation of manufacturing high-temperature sensors based on nanostructured layers of high-silicon carbide thickness of 2 ÷ 5 microns in high-resistance pidkladyntsi. The choice of substrate material parameters and high-resistance nanostructured silicon carbide Stage 3:Preliminary development of design documentation and technological scheme of manufacturing high enough inertial sensor temperature. Design and manufacture of photomasks Stage 4:Optimization of conditions of production and design-engineering model of high-enough inertial sensors based on thick (10 ÷ 20 mkm) high nanostructured layers of silicon carbide. Stage 5:Adjustment of working sets schematic ED and TD results for manufacturing and testing of an experimental batch of samples
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