Title: | The effective organic phototransistor based on the nanostructured layer of the semiconductor fullerene C60 |
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Description: | The effective organic phototransistor based on the nanostructured layer of the semiconductor fullerene C60 has been proposed and implemented. The phototransistor effect was manifested in the light-induced shift of the transistor threshold voltage to the negative values side. It is found that the photosensitivity appears only in the devices with the top position of the gate, that is, when the gate dielectric (parilene) is thermally deposited over the functional layer of C60 and this is connected with appearance of free radicals in result of a spontaneous chemical reaction between the molecules of C60 and monomers of parilene in the course of polymerization. |
Technical advantages: | The sensitivity of the organic field effect phototransistor based on the nanostructured layer of fullerene equal to ~1000 A/W is obtained which is three times as large than that of the silicon detectors and it gives in only to that of detectors based on the PbS quantum dots. |
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