| Title: | Obtaining the basics of film deposition technology of nanocrystalline silicon carbide for the production of highly stable temperature sensors based on them |
| Type of product: | Release of new product: technology Sensors have a high stability of the measurement range. They have quick-response and radiation resistance, have temperature resistance coefficient α= 0,065 1 / °C. Microchips with built-in sensors. Highly stable miniature temperature sensors based on nanocrystalline 3C-SiC films to measure temperatures in the range of 4 ÷ 900 ° C, design is Planar. |
| Description: | Sensitive element Temperature Sensor is nanostructured silicon carbide layer on a sapphire substrate. Nanocrystalline SiC structure was overwhelming 3C. The resistivity of the film was 100000 ohm ×cm. Sensor configuration is planar. The design of the sensor using contact system of SiC-Ni-TiB2-Au |
| Technical advantages: | First developed highly stable sensors based on nanocrystalline SiC films with controlled resistivity and high temperature sensivity to measure temperatures in the range 4 - 900 K in magnetic fields up to 14 Tesla. Accuracy of measurement temperature does not exceed 10% of a magnetic field 14 T, which is at the level of the best examples of cryogenic resistance thermometers, existing now. |
| The economic benefits: | Creating sensors based of nanocrystals silicon carbide provide of сreate new class of a competitive electronic element base for power engineering aviation and automotive industry, military. |
| The impact on the environment. Environment: | Does not affect the external situation, Рroduction of environmentally friendly |
| The stage of completion: | OtherReport on the scientific and technical work, design and technological documentation of experimental samples. |
| Implementation: | not implemented |
| Intellectual Property Rights: | Patents |
| Forms and conditions of transfer of products: | Investments |
