Title: | Semiconductor heterostructures with quantum wells and delta-doped barriers or short-period superlattice for obtaining effetive real-space transfer of charge carriers |
Type of product: | Issue of new types of products: methods, theories |
Description: | It is proposed and grounded to use semiconductor heterostructures with quantum wells and delta-doped barriers with a view to obtain effective real-space transfer of charge carries induced by the applied longitudinal electric field or temperature. A number of effects is found which are connected with the real-space transfer of carriers from the structural quantum wells into the potential wells of the inpurity delta-layers: appearance of the positive magnetoresistance; non-linear dependence of the current on the electric field.
2. A new kind of structures with the real-space transfer of "hot" electrons (RSHE) is proposed and implemented which consists of quantum wells tunnel-coupled with the short-period superlattice fragments. A strong non-liearity of conduction is found at the electric field strengths which are considerably less as compared to other known structures with RSHE. These structures are interesting for creation generators of the HF and UHF ranges. |
Technical advantages: | it is difficult to state definitely at the current step |
The economic benefits: | it is difficult to state definitely at the current step |
The impact on the environment. Environment: | there is no direct influence |
The stage of completion: | Report on R & D (OCD) |
Implementation: | |
Intellectual Property Rights: | |
Forms and conditions of transfer of products: | |