Set up on August 5, 1966.
Its principal lines of research activities are:
- fundamental and applied studies of micro-, nano- and opto-electronic structures towards developing integrated circuits, light-emitting diodes and special-purpose microelectronic devices;
- development and production of circuits, devices for lasers and optoelectronics;
- developing methods for diagnostics and physico-engineering studies of semiconducting materials and devices.
Major achievements and developments:
- The basic technology has been developed for designing and manufacturing very large-sized integrated circuits to be used for reading information from matrix photodetectors in thermal-vision systems.
- Using flexible polyimid-aluminium carrier, the assemblage technology for integrated matrixes of powerful light-emitting diodes has been worked out; it is intended for manufacturing white-light sources and traffic lights.
- Techniques for manufacturing temperature sensors, relying on flexible polyimid-nickel carrier, have been developed.
- Technologies have been developed and devices manufactured for measuring, registering and identifying X-ray, alpha-, bеtа-, gamma- and UV radiation on the basis of silicon p-i-n photodiodes and zinc-selenide Shottky diodes.
- The architecture has been developed and design implemented of very large-sized integrated circuits for microelectronic coordinate-sensitive detector of devices intended for elemental analysis of substances.
- Precision techniques have been developed for local determination of important physical, chemical and electro-physical parameters of technological facilities for manufacturing micro- and opto-electronic devices.