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Ye. O. Paton Electric Welding Institute
I. M. Frantsevich Institute for Problems of Materials Sciences
Chernivtsi Division of I. M. Frantsevich Institute of Materials Science Problems
V. N. Bakul Institute for Superhard Materials
Physical-and-Technological Institute of Metals and Alloys
H. V. Karpenko Physico-Mechanical Institute
‘Institute for Single Crystals’ State R&D Corporation
Institute for Single Crystals
Institute for Scintillation Materials
Research Institute of Microdevices
R&D Immunobiotechnology Center
Z. I. Nekrasov Iron & Steel Institute
Institute of Pulse Processes and Technologies
Institute of Thermoelectricity under NAS and MES of Ukraine
Institute for Single Crystals 
 
60 Lenina Ave., 61001, Kharkiv, Ukraine
Phone: (057) 340 2230; fax: (057) 340 9343
e-mail:info@isc.kharkov.com
http://www.isc.kharkov.com
Director
Vyacheslav M. Puzikov,
NAS corresponding member

Set up in 1955.

Basic research trends of the Institute are:

- fundamental studies of growth processes for crystals and nano-systems; search for new crystalline media with functionally important characteristics; scientific foundations of nano-technologies;

- integrated studies of physical phenomena in optical single crystals, nanosystems and their physico-chemical properties;

- the theory of non-linear phenomena, transport and structure-formation in condensed matter.

Major achievements and developments:

- Scientists of the Institute have developed a technological cycle, based on Stepanov method, for growing shaped sapphire single crystals intended for manufacturing a wide range of medical products (intricate-shape implants, including those of friction-pair type), tubes of round, square, ellipsoid sections, ribbons, prisms, H- and U- profiles, rods etc.

- To manufacture high-efficiency electroluminescence light sources, a technology has been developed for growing sapphire of high-perfection structure, optical quality and chemical purity from alumina with horizontally oriented crystallization. The novel technology has been implemented in pilot production. A 2.5-fold reduction in crystal cost has been achieved. Production of 220 x 220 x 30 mm sapphire crystals has beens organized.

- A new technology of high-speed growth of large nonlinear optical KDP and DKDP single crystals has been developed. Those optical elements are used in the installations of controlled nuclear fusion. New radiation-sensitive KDP crystals for detecting thermal neutrons in mixed gamma-fields have been produced.

- For the first time ever, large-sized laser AIIBVI crystals have been grown from the melt with Bridgemen method. They are intended for optical elements of infrared power optics and compact semiconductor gamma-detectors.

- A technological process has been developed to grow ZnSe:Cr2+ crystals for producing active elements of frequency-controlled lasers of the middle infrared range, thus providing record-making values of efficiency factor in continuous and pulse laser regimes. Such lasers have a unique set of performances that permit their wide application in medicine, engineering and scientific research.




















   
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