Founded in 1969.
Its principal research is aimed at studying semiconductors with layered crystalline structure, narrow-gap semiconductors and solid solutions on their base.
Major achievements and developments of the Division:
- Processes of intercalation of layered compounds have been studied and intercalated materials with new properties obtained.
- Radiation-resistant heterostructures based on layered semiconductors have been produced.
- Nano-structures forming on layered crystals have been studied.
- Materials have been produced for electrodes of supercapacitors and accumulators with improved power parameters.
- Teories for impurity states, phase transitions, magnetic interactions in narrow-gap semiconductors have been developed; theoretical investigations of localization in low-dimensional magnetic structures and anomalous Hall effect in inhomogeneous and impurity systems have been carried out.
- Search has been conducted for new effective materials based on narrow-gap A4B6 semiconductors, with a view to developing photodetectors.
- A technology has been developed for growing perfect PbSnTe single crystals from vapour phase; those are to be used in producing substrates for epitaxy of heterostructure photodetectors in infrared spectral range.
- A technique, relying on nuclear magnetic resonance, has been developed to determine the effect of defects and impurities on basic characteristics of materials.